Characteristics of Thin-Film Transistors Based on 2,8-Disubstituted Chrysene Derivatives with Polymer-Treated SiO₂ Dielectric Layers
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- KUNUGI Yoshihito
- Department of Applied Chemistry, Faculty of Engineering, Tokai University
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- HOSHINO Hikaru
- Department of Applied Chemistry, Faculty of Engineering, Tokai University
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- OTSUKI Hiroyuki
- Research Laboratory, Ushio Chemix Corporation
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- OKAMOTO Kazuo
- Research Laboratory, Ushio Chemix Corporation
書誌事項
- タイトル別名
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- Characteristics of Thin-Film Transistors Based on 2,8-Disubstituted Chrysene Derivatives with Polymer-Treated SiO<sub>2</sub> Dielectric Layers
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抄録
We investigated the characteristics of organic thin-film transistors based on 2,8-disubstituted chrysene derivatives with a polymer treated SiO2 dielectric layer to examine the effect of polymer coating. Field-effect characteristics were strongly influenced by the applied polymer insulators, and the best field-effect mobility (2.8 cm2 V−1 s−1) was obtained for the CYTOP-treated device incorporating 2,8-diphenyl chrysene.
収録刊行物
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- Electrochemistry
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Electrochemistry 81 (5), 402-404, 2013
公益社団法人 電気化学会
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詳細情報 詳細情報について
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- CRID
- 1390001206496060288
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- NII論文ID
- 10031152013
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- NII書誌ID
- AN00151637
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- ISSN
- 21862451
- 13443542
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- NDL書誌ID
- 024456327
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用可