Behaviors of Deuterium Retention and Microstructure Change of Tungsten Simultaneously Implanted with Carbon and/or Helium Ions

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Abstract

Recent studies of deuterium (D) retention and microstructure behaviors of tungsten simultaneously implanted with carbon ion (C<sup>+</sup>) and/or helium ion (He<sup>+</sup>) are reviewed. Implantation of deuterium ion (D<sub>2</sub><sup>+</sup>) was performed by simultaneous implantations with C<sup>+</sup>, He<sup>+</sup> and a mixture of C<sup>+</sup> and He<sup>+</sup> using a triple-ion-implantation system, while D retention behavior was studied by thermal desorption spectroscopy. The D depth profile, microstructure changes, and chemical states of constituent atoms were observed by glow-discharge optical emission spectroscopy, transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy, respectively. D retention was observed to be enhanced by both C<sup>+</sup> and He<sup>+</sup> implantations. After the simultaneous implantation of D<sub>2</sub><sup>+</sup> and C<sup>+</sup>, substantial D<sub>2</sub> desorption was observed at temperatures higher than 600 K. Following the simultaneous implantation of D<sub>2</sub><sup>+</sup> and He<sup>+</sup>, D retention increased to about five times that for D<sub>2</sub><sup>+</sup> implantation, while the D desorption temperature region was the same. However, in the case of triple-ion implantation, the accumulation of C on tungsten was suppressed, and the retention of D trapped by C was reduced. The D retention in triple-ion-implanted tungsten was considered to be suppressed by He<sup>+</sup> implantation. TEM observations suggest that most of the deuterium would be retained at grain boundaries and lattice defects such as vacancy clusters.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 54(4), 430-436, 2013-04-01

    The Japan Institute of Metals and Materials

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Codes

  • NII Article ID (NAID)
    10031162805
  • NII NACSIS-CAT ID (NCID)
    AA1151294X
  • Text Lang
    ENG
  • Article Type
    REV
  • ISSN
    13459678
  • NDL Article ID
    024376087
  • NDL Call No.
    Z53-J286
  • Data Source
    CJP  NDL  J-STAGE 
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