60 GHz Millimeter-Wave CMOS Integrated On-Chip Open Loop Resonator Bandpass Filters on Patterned Ground Shields

DOI Web Site 31 References
  • POKHAREL Ramesh K.
    EJUST Centre, Kyushu University
  • LIU Xin
    Department of Electronics, Graduate School of ISEE, Kyushu University
  • MAT Dayang A.A.
    Department of Electronics, Graduate School of ISEE, Kyushu University
  • DONG Ruibing
    Department of Electronics, Graduate School of ISEE, Kyushu University
  • KANAYA Haruichi
    Department of Electronics, Graduate School of ISEE, Kyushu University
  • YOSHIDA Keiji
    Department of Electronics, Graduate School of ISEE, Kyushu University

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Abstract

This paper presents the design of a second-order and a fourth-order bandpass filter (BPF) for 60GHz millimeter-wave applications in 0.18µm CMOS technology. The proposed on-chip BPFs employ the folded open loop structure designed on pattern ground shields. The adoption of a folded structure and utilization of multiple transmission zeros in the stopband permit the compact size and high selectivity for the BPF. Moreover, the pattern ground shields obviously slow down the guided waves which enable further reduction in the physical length of the resonator, and this, in turn, results in improvement of the insertion losses. A very good agreement between the electromagnetic (EM) simulations and measurement results has been achieved. As a result, the second-order BPF has the center frequency of 57.5GHz, insertion loss of 2.77dB, bandwidth of 14GHz, return loss less than 27.5dB and chip size of 650µm × 810µm (including bonding pads) while the fourth-order BPF has the center frequency of 57GHz, insertion loss of 3.06dB, bandwidth of 12GHz, return loss less than 30dB with chip size of 905µm × 810µm (including bonding pads).

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