Atomic-Scale Interface Characterization by STEM

• SHIBATA Naoya

  Institute of Engineering Innovation, The University of Tokyo Japan Science and Technology Agency, PRESTO

• IKUHARA Yuichi

  Institute of Engineering Innovation, The University of Tokyo Nanostructures ResearchLaboratory, Japan Fine Ceramics Center

Bibliographic Information

Other Title

• STEMによる材料界面の原子レベル観察
• STEM ニ ヨル ザイリョウ カイメン ノ ゲンシ レベル カンサツ

Abstract

Aberration-corrected scanning transmission electron microscopy (STEM) is becoming a very powerful tool to directly characterize defect structures in materials and devices at atomic dimensions. Here, we review our recent researches on material interface characterization using STEM. First example is that the direct imaging of individual dopant atoms within a buried alumina interface. The second example is the atomic-scale characterization of Au nanoislands on TiO₂ substrates. The ability to directly probe individual atoms within buried interfaces at very high-resolution will significantly assists our understanding of interface structures and related properties in many advanced materials and devices.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 34 (5), 253-258, 2013

  The Surface Science Society of Japan

Keywords

• STEM
• interface
• dopant
• surface

Details

• CRID: 1390282681434520960
• NII Article ID: 10031170839
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.34.253
• COI: 1:CAS:528:DC%2BC3sXhsFSktr%2FL
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 024664254
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024664254
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed