Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence

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Journal

  • Applied physics express : APEX

    Applied physics express : APEX 6(5), "056501-1"-"056501-3", 2013-05-25

    Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    10031174343
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    18820778
  • NDL Article ID
    024520460
  • NDL Call No.
    Z78-A526
  • Data Source
    CJP  NDL  Crossref 
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