Interfacial Nanostructure and Electrical Properties of Ti₃SiC₂ Contact on p-Type Gallium Nitride (Special Issue on Nanojoining and Microjoining) Interfacial Nanostructure and Electrical Properties of Ti_3SiC_2 Contact on p-Type Gallium Nitride

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Abstract

In the present study, the interfacial nanostructure and electrical properties of Ti<sub>3</sub>SiC<sub>2</sub> formed by depositing a Ti–Si–C ternary film with a composition stoichiometrically equivalent to Ti<sub>3</sub>SiC<sub>2</sub> on p-type GaN and subsequent annealing at 1073 K were analyzed by X-ray diffraction, transmission electron microscopy and direct current conduction test. The results reveal that structural changes occur by the annealing. Polycrystalline Ti<sub>3</sub>SiC<sub>2</sub> is formed at most of the contact interface area and single crystal Ti<sub>3</sub>SiC<sub>2</sub> at small area of the contact interface. Furthermore, other than Ti<sub>3</sub>SiC<sub>2</sub> phase, polycrystalline Ti<sub>5</sub>Si<sub>3</sub> and TiSi<sub>2</sub> with different grain sizes are also formed, resulting in a formation of three-layered film after the annealing. By all these structural change, the electric conduction profiles show that the Schottky barrier height (SBH) is reduced. The estimated SBH of the Ti<sub>3</sub>SiC<sub>2</sub> contact on p-type GaN is 0.70 eV, which is 1.73 eV lower than the theoretically predicted value.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 54(6), 890-894, 2013-06-01

    The Japan Institute of Metals and Materials

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Codes

  • NII Article ID (NAID)
    10031176403
  • NII NACSIS-CAT ID (NCID)
    AA1151294X
  • Text Lang
    ENG
  • Article Type
    REV
  • ISSN
    13459678
  • NDL Article ID
    024524611
  • NDL Call No.
    Z53-J286
  • Data Source
    CJP  NDL  J-STAGE 
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