DLTS Evaluation of Near-Interface Traps in Ge-MIS Structures Fabricated by ECR-Plasma Techniques

• Okamoto Hiroshi

  Hirosaki University

• Narita Hidehumi

  Hirosaki University

• Sato Shinya

  Hirosaki University

• Iwasaki Takuro

  Hirosaki University

• Ono Toshiro

  Tokyo University of Science, Suwa

• Otani Yohei

  Tokyo University of Science, Suwa

• Fukuda Yukio

  Tokyo University of Science, Suwa

Bibliographic Information

Other Title

• ECRプラズマ法によって作製したGe-MIS構造における界面近傍トラップのDLTS評価
• ECR プラズマホウ ニ ヨッテ サクセイ シタ Ge-MIS コウゾウ ニ オケル カイメン キンボウ トラップ ノ DLTS ヒョウカ

Abstract

A Ge-MIS structure has attracted attention for the candidate of a next generation CMOS device. To date, we have successfully developed Ge-MIS structures with superior interface qualities by ECR (Electron Cyclotron Resonance) plasma techniques. In addition, we have shown that DLTS (Deep Level Transient Spectroscopy) method is useful for evaluating the Ge-MIS structures. In this report, we have evaluated the near-interface traps in GeN_x/Ge structures by DLTS method, and have evaluated the effect of annealing on reducing the traps. The traps observed in the Ge-MIS samples were greatly reduced by 400°C annealing. The origins of the traps are also discussed by comparing with the traps in germanium reported to date.

Journal

• IEEJ Transactions on Electronics, Information and Systems

  IEEJ Transactions on Electronics, Information and Systems 133 (8), 1481-1484, 2013

  The Institute of Electrical Engineers of Japan

Keywords

• DLTS
• Ge-MIS
• ECR plasma nitridation
• ECR sputtering

Details

• CRID: 1390001204608773760
• NII Article ID: 10031189039
• NII Book ID: AN10065950
• DOI: 10.1541/ieejeiss.133.1481
• ISSN: 13488155
• ISSN: 03854221
• NDL BIB ID: 024846517
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024846517
• Web Site: https://www.jstage.jst.go.jp/article/ieejeiss/133/8/133_1481/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed