Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

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Author(s)

Journal

  • Applied physics express : APEX

    Applied physics express : APEX 6(8), "086504-1"-"086504-4", 2013-08-25

    Japan Society of Applied Physics

Codes

  • NII Article ID (NAID)
    10031193080
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    18820778
  • NDL Article ID
    024786266
  • NDL Call No.
    Z78-A526
  • Data Source
    CJP  NDL 
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