Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

• NAKANO Takuma

  Research Center for Integrated Quantum Electronics, Hokkaido University

• AKAZAWA Masamichi

  Research Center for Integrated Quantum Electronics, Hokkaido University

Abstract

We investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HF treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E96.C (5), 686-689, 2013

  The Institute of Electronics, Information and Communication Engineers

Keywords

• InAlN
• XPS
• surface treatment
• HF
• native oxide

Details

• CRID: 1390282679356713984
• NII Article ID: 10031193914
• NII Book ID: AA10826283
• DOI: 10.1587/transele.e96.c.686
• ISSN: 17451353
• ISSN: 09168524
• HANDLE: 2115/53049
• Web Site: https://www.jstage.jst.go.jp/article/transele/E96.C/5/E96.C_686/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed