プラズマCVD-SiNxCy膜のEPMAによる組成分析

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  • Composition analysis by EPMA for SiNxCy films prepared by plasma CVD

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This paper is concerned with the composition analysis using wavelength dispersive electron probe X-ray microanalyzer (EPMA) for SiNx, SiCy, SiNxCy films prepared by plasma CVD. The accelerating voltage of the electron beam was selected so that the region of X-ray projection source was limited within the film thickness. C, N, O and Si contents were analyzed from the intensities of characteristic X-ray. The contents of C, N and Si elements were approximately proportional to the feeding rates of the raw gases. By comparing the results derived from the peak height with that derived from the integral (product of peak height and half width) in intensities of characteristic X-rays, the latter was in good agreement with the results from gas volumetric analysis method, and seemed to have a higher precision.

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