Electrical Characteristics of Epitaxial Si Grown on SIMOX Substrates by Ultraclean-CVD Technique

Search this Article

Author(s)

Journal

  • Memoirs of the Hokkaido Institute of Technology.

    Memoirs of the Hokkaido Institute of Technology. (30), 131-136, 2002-03

    Hokkaido Institute of Technology

Codes

  • NII Article ID (NAID)
    110000340700
  • NII NACSIS-CAT ID (NCID)
    AN00229541
  • Text Lang
    ENG
  • Journal Type
    大学紀要
  • ISSN
    03850862
  • NDL Article ID
    6303143
  • NDL Source Classification
    ZM2(科学技術--科学技術一般--大学・研究所・学会紀要)
  • NDL Call No.
    Z14-644
  • Data Source
    NDL  NII-ELS 
Page Top