書誌事項
- タイトル別名
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- Microstructure of a-Si/a-SiC Multilayer Films Prepared by rf Sputtering.
- スパッタホウ ニ ヨリ サクセイシタ a Si a SiC チョウコウシ ハク
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Amorphous silicon/amorphous silicon carbide (a-Si/a-SiC) multilayer films are prepared by a dual rf magnetron sputtering method. The multilayer structure is confirmed by a depth profile of Auger electron spectroscopy (AES). Difference in the etch rate of amorphous silicon and amorphous silicon carbide in a mixture of HF, HNO3 and CH3COOH creates series of concentric steps in multilayer films, that show up clearly in the observation by an optical microscope. Furthermore, a small angle X-ray diffraction is carried out in order to be clarified the periodic structure. In the [a-Si (14.1 nm)/ a-SiC(7.5 nm)]30 film with its superstructure period Λ =21.6 nm, from 1st to 23rd Bragg reflections caused by the regular periodicity can be observed. The diffraction profile has been well explained by a l-dimensional step model, which takes into account a random distribution of the superstructure period, varying according to a Gaussian distribution with the width ΔΛ/Λ =0.3 % (ΔΛ =0.064 nm).
収録刊行物
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- 精密工学会誌
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精密工学会誌 60 (1), 138-142, 1994
公益社団法人 精密工学会
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詳細情報 詳細情報について
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- CRID
- 1390282679741751296
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- NII論文ID
- 110001371496
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- NII書誌ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
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- NDL書誌ID
- 3864143
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 使用不可