高周波スパッタ蒸着法による多結晶Siの低温成膜に関する研究 (第2報)

DOI Web Site 参考文献8件

書誌事項

タイトル別名
  • Low Temperature Growth of Polyclystalline Silicon Films by RF Sputtering Method (2nd Report)
  • 高周波スパッタ蒸着法による多結晶Siの低温成膜に関する研究(第2報)Si薄膜の構造および電気・光学特性
  • コウシュウハ スパッタ ジョウチャクホウ ニヨル タケッショウ Si ノ テイ
  • Structure, Electrical and Optical Properties of the Polycrystalline Silicon Films
  • Si薄膜の構造および電気・光学特性

この論文をさがす

抄録

Structure of polycrystalline silicon films was investigated by X-ray diffraction, reflection electron diffraction and transmission electron microscopy. Furthermore, electric-al and optical properties of the films were studied with the measurements of IR absorption, optical absorption, electron spin resonance and electrical conductivity. The films were prepared by rf planar magnetron sputtering, in which process atomic hydrogen radicals were utilized in order to make the polycrystalline silicon films on the substrate at low temperature. It was shown from X-ray diffraction, reflection electron diffraction and transmission electron microscopy that most of crystal silicon grains grew with a [100] texture, and that the grain sizes were 10 - 20nm. The results obtained from IR absorption and optical absorption measurements were as follows; hydrogen content decreased with the increase of hydrogen partial pressure (PH<SUB>2</SUB>) in the range of 2 ≤ PH<SUB>2</SUB> ≤ 7mTorr, which was caused by the formation of Si Si bonds, and in the range of 7 ≤ PH2 ≤ 12mTorr, however, hydrogen content increased gradually with PH<SUB>2</SUB>, which suggested that dangling bonds in the silicon films were more terminated in the higher hydrogen partial pressure. These facts were also explained by the electrical conductivity measurement, and it was found that the polycrystalline silicon film prepared under the highest hydrogen partial pressure had the lowest hopping site density in the films observed in this work.

収録刊行物

  • 精密工学会誌

    精密工学会誌 63 (2), 233-237, 1997

    公益社団法人 精密工学会

参考文献 (8)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ