書誌事項
- タイトル別名
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- Study on In-Process Measurement of Silicon Wafer Surface Defects by Laser Scattered Defect Pattern. 2nd Report. Fast Defect Measurement Method using LSDP.
- ヒカリ サンラン パターン オ モチイタ シリコンウエハ カコウ ヒョウメン ケッカン ノ インプロセス ケイソク ニ カンスル ケンキュウ ダイ2ホウ コウソク ケッカン ケイソクホウ ノ テイアン
- Fast Defect Measurement Method using LSDP
- 高速欠陥計測法の提案
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This paper presents a new in-process measurement method for evaluating small defects on a silicon wafer surface by detecting the intensity distribution, "Laser Scattered Defect Pattern (LSDP), " corresponding to the superposition of scattered light from a defect and reflected light from a surface. In order to apply this optical measurement method to in-process measurement, two-stage measurement is proposed. That is, the first stage means "detection of defect positions" and the second stage does "evaluation of defect type". The several basic scanning experiments show that the proposed two-stage measurement method is effective automatic in-process measurement technology for measuring the silicon wafer surface defects with the sub-micro meter scale size at high speed.
収録刊行物
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- 精密工学会誌
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精密工学会誌 68 (7), 962-966, 2002
公益社団法人 精密工学会
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詳細情報 詳細情報について
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- CRID
- 1390001204796920064
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- NII論文ID
- 110001373448
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- NII書誌ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
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- NDL書誌ID
- 6217092
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可