大気圧プラズマCVD法により高速形成したSiN<sub>x</sub>薄膜の構造と成膜パラメータの相関

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  • Correlation between Deposition Parameters and Structures of the SiN<sub>x</sub> Films Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD
  • 大気圧プラズマCVD法により高速形成したSiNx薄膜の構造と成膜パラメータの相関
  • タイキアツ プラズマ CVDホウ ニ ヨリ コウソク ケイセイ シタ SiNx ハクマク ノ コウゾウ ト セイマク パラメータ ノ ソウカン
  • Correlation between Deposition Parameters and Structures of the SiNx Films Deposited at Extremely High Rates by Atmospheric Pressure Plasma CVD

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Using the atmospheric pressure plasma chemical vapor deposition (CVD) technique, further investigations were performed to improve the density of silicon nitride (SiNx) films deposited at extremely high deposition rate. The films were prepared on Si(001) wafers at atmospheric pressure in a very high frequency (150MHz) plasma of gas mixtures containing He, H2, SiH4 and NH3. Si-N, Si-H and N-H bond densities of the SiNx films were studied as functions of NH3/SiH4 ratio and the H2 concentration by Fourier transformation infrared (FTIR) absorption spectroscopy. Etching rate with buffered HF (BHF) solution, refractive index and relative permittivity of the SiNx films were also studied as a function of Si-N bond density of those films. It is found that by decreasing NH3/SiH4 ratio or increasing H2 concentration, Si-N and Si-H bond densities increase, while N-H bond density decreases. It is also noticed that N-H bond density is larger than Si-H bond density within the present deposition conditions, indicating that the SiNx films are N-rich. These facts suggest that elimination of excessive hydrogen atoms bonded with N atoms at the film-growing surface is an important factor to form SiNx film with a dense Si-N network. The highest Si-N bond density and then the lowest hydrogen content are obtained for the film deposited with the H2 concentration of 20% and the input power of 1000W.

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