Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots.

DOI Web Site Web Site BIBCODE 被引用文献1件 参考文献59件
  • Okuno Tsuyoshi
    Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571
  • Nomura Mitsuhiro
    Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571
  • Masumoto Yasuaki
    Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571
  • Terai Yoshikazu
    Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573
  • Kuroda Shinji
    Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573
  • Takita and Koki
    Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573

この論文をさがす

抄録

We report the photoluminescence and excitation spectra of CdTe self-assembled quantum dots grown by molecular beam epitaxy in ZnTe. In photoluminescence excitation spectra, multiple longitudinal-optical (LO) phonon structures up to the 19th order are observed even above ZnTe-matrix energy, and the wetting layer was clarified. Photoluminescence spectra of CdTe quantum dots having LO phonon structures under quasi-resonant excitation show that CdTe dots are surrounded by ZnxCd1-xTe (x∼0.8, where x ranges from 0.5 to 1). Phonon-mediated carrier relaxation is discussed. Photoexcited carriers forming excitons are relaxed by emitting multiple LO phonons of the ZnTe matrix successively from the higher energy state of the matrix to the wetting layer. At the wetting layer, involved LO phonons are transformed to those of ZnxCd1-xTe surrounding the CdTe dots. ZnTe-like and CdTe-like LO phonons and, lastly, acoustic phonons, are emitted in relaxation to the CdTe-dot state.

収録刊行物

被引用文献 (1)*注記

もっと見る

参考文献 (59)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ