Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4×2) and p(2×2) by Scanning Tunneling Microscopy

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Author(s)

Abstract

The reconstruction on a Ge(001) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80 K. It is c(4×2) with the sample bias voltage V_b ≤ -0.7 V. This structure can be maintained with V_b ≤ 0.6 V. When V_b, is higher than 0.8 V during the scanning, the structure changes to p(2×2). This structure is then maintained with V_b ≥ -0.6 V. The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the electric field under the STM tip.

Journal

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 72(10), 2425-2428, 2003-10-15

    The Physical Society of Japan (JPS)

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Codes

  • NII Article ID (NAID)
    110001954243
  • NII NACSIS-CAT ID (NCID)
    AA00704814
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • ISSN
    00319015
  • NDL Article ID
    6713334
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A404
  • Data Source
    CJP  CJPref  NDL  NII-ELS 
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