Electron Spin Resonance Observations of Field-Induced Polarons in Regioregular Poly(3-octylthiophene) Metal-Insulator-Semiconductor Diode Structures
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- Marumoto Kazuhiro
- Department of Applied Physics, Nagoya University
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- Muramatsu Yasuhito
- Department of Applied Physics, Nagoya University
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- Ukai Sota
- Department of Applied Physics, Nagoya University
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- Ito Hiroshi
- Department of Applied Physics, Nagoya University
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- Kuroda Shin-ichi
- Department of Applied Physics, Nagoya University
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Abstract
Electron spin resonance (ESR) measurements are performed on field-induced carriers in regioregular poly(3-octylthiophene) (RR-P3OT) using metal–insulator–semiconductor (MIS) diode structures with RR-P3OT and Al2O3 as the active semiconductor and insulating layers, respectively. Clear ESR signals (g∼2.002) are observed, which increase as the absolute value of the gate bias increases in the accumulation mode. The ESR signal is consistent with that of the photogenerated positive polarons in RR-P3OT detected by the light-induced ESR of RR-P3OT/C60 composites, providing direct evidence that the field-induced carriers are polarons. Moreover, the molecular orientation of RR-P3OT’s in the diode structures, which is consistent with the self-organized lamellae reported, is confirmed by the anisotropy of the ESR signal.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 73 (7), 1673-1676, 2004
THE PHYSICAL SOCIETY OF JAPAN
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Details 詳細情報について
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- CRID
- 1390282679163704448
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- NII Article ID
- 110001954876
- 210000104888
- 130004538859
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- NII Book ID
- AA00704814
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- BIBCODE
- 2004JPSJ...73.1673M
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- COI
- 1:CAS:528:DC%2BD2cXnt1ert7k%3D
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 7004054
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed