Phase Boundaries between Quantum Hall Metal and Hall Insulator in Si-MOSFET's and Many-Body Enhancement of Valley- and Zeeman-Splitting

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Author(s)

Abstract

We have experimentally studied metal-insulator transitions in a two-dimensional electron system in Si-MOSFET's in a magnetic field and derived a phase diagram on aν (Landau level filling factor) vs. disorder (resistivity in the absence of magnetic field)plane. Structures of stabilized phase boundaries at ν =1 and ν =2 are discussed based on many-body enhancement of valley- and Zeeman-splitting, respectively.

Journal

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 64(7), 2311-2315, 1995-07-15

    The Physical Society of Japan (JPS)

References:  22

Codes

  • NII Article ID (NAID)
    110001957086
  • NII NACSIS-CAT ID (NCID)
    AA00704814
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    00319015
  • NDL Article ID
    3623527
  • NDL Source Classification
    MC64(分子・物性--半導体)
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A404
  • Data Source
    CJP  NDL  NII-ELS  J-STAGE 
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