Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs-AlxGa1-xAs Heterojunction Interface

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Author(s)

Abstract

Magnetophonon resonance in a two-dimensional electron system at the in-terface of GaAs-A[.Ga. ,As heterojunction was investigated using pulsed highmagnetic fields up to 35 T. The fundamental peaks with a harmonic number V= lwas observed for the first time. The polaron mass of 0.0745-50.0015 m. wasdetermined by the analysis of the oscillatory resistance change using the LOphonon energy of GaAs. This value was successfully interpreted in terms of thenon-parabolicity of the conduction band in GaAs taking into account the twodimensionality of the electronic state. A remarkably large damping of the oscilla-tion was observed in spite of the large electron mobility.

Journal

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 51(7), p2168-2173, 1982-07

    The Physical Society of Japan (JPS)

Cited by:  2

Codes

  • NII Article ID (NAID)
    110001965879
  • NII NACSIS-CAT ID (NCID)
    AA00704814
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • ISSN
    00319015
  • NDL Article ID
    2455558
  • NDL Source Classification
    MC64(分子・物性--半導体)
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A404
  • Data Source
    CJPref  NDL  NII-ELS 
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