Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs-AlxGa1-xAs Heterojunction Interface
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Magnetophonon resonance in a two-dimensional electron system at the in-terface of GaAs-A[.Ga. ,As heterojunction was investigated using pulsed highmagnetic fields up to 35 T. The fundamental peaks with a harmonic number V= lwas observed for the first time. The polaron mass of 0.0745-50.0015 m. wasdetermined by the analysis of the oscillatory resistance change using the LOphonon energy of GaAs. This value was successfully interpreted in terms of thenon-parabolicity of the conduction band in GaAs taking into account the twodimensionality of the electronic state. A remarkably large damping of the oscilla-tion was observed in spite of the large electron mobility.
- Journal of the Physical Society of Japan
Journal of the Physical Society of Japan 51(7), p2168-2173, 1982-07
The Physical Society of Japan (JPS)