Huge Enhancement of Impurity Scattering due to Critical Valence Fluctuations in a Ce-Based Heavy Electron System.

• Miyake Kazumasa

  Division of Materials Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531

• Maebashi Hideaki

  Division of Materials Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531

抄録

On the basis of the Ward-Pitaevskii identity, the residual resistivity ρ₀ is shown to exhibit huge enhancement around the quantum critical point of valence transition in Ce-based heavy electron systems. This explains the sharp peak of ρ₀ observed in CeCu₂Ge₂ under a pressure of P∼16 GPa where the superconducting transition temperature also exhibits a sharp peak.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 71 (4), 1007-1010, 2002

  一般社団法人 日本物理学会

キーワード

• enhanced impurity scattering
• critical valence fluctuations
• CeCu<FONT SIZE="-1"><SUB>2</SUB></FONT>Ge<FONT SIZE="-1"><SUB>2</SUB></FONT>
• CeCu<FONT SIZE="-1"><SUB>2</SUB></FONT>Si<FONT SIZE="-1"><SUB>2</SUB></FONT>

詳細情報

• CRID: 1390001204184278400
• NII論文ID: 110001971665
• NII論文ID: 210000103616
• NII論文ID: 130004538184
• NII書誌ID: AA00704814
• DOI: 10.1143/jpsj.71.1007
• BIBCODE: 2002JPSJ...71.1007M
• ISSN: 13474073
• ISSN: 00319015
• NDL書誌ID: 6138592
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6138592
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.71.1007
• 本文言語コード: en
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