In situ Scanning Tunneling Microscopy Observation of the Unreconstructed Region in a Quenched Si (111) Surface : Dynamic Size-Conversion of the Stacking-Faulted Half of the DAS Structure

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Author(s)

Abstract

The DAS 7 x7 strrface strtrcttrre is knoxvn to be the rnost stable on Si(Ill), and we investigatedits fornaation mechanisna by scanning tttnneling zaaicroscopy. Triangtmlar narrow trnreconstrtrcted-regions ("lxl"), prepared on terraces by qtrenching, are chosen for in situ observation of thefornaatiora of the trnit cell of the DAS T'><T at abotrt 25O'C. It is demonstrated thart the singlestacking-fatrlted half of the unit cell is forraaed or annihilated dynamically in a structural sequenceof "lxl"++5x5++7x7e9x9. The f'attlted half' is stabilized when another neighboring faulted-half of the sarne size is formed during its lifetime. We pIO])OS(2 a fornaation uaaodel for the 7x7unit cell.

Journal

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 67(5), 1513-1516, 1998-05-15

    The Physical Society of Japan (JPS)

References:  28

Codes

  • NII Article ID (NAID)
    110001978468
  • NII NACSIS-CAT ID (NCID)
    AA00704814
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    00319015
  • NDL Article ID
    4493449
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A404
  • Data Source
    CJP  NDL  NII-ELS 
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