Thermal Expansion and de Haas-van Alphen Effect of CeRh<sub><b>2</b></sub>Si<sub><b>2</b></sub>
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- Araki Shingo
- Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
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- Misawa Akira
- Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
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- Settai Rikio
- Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
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- Takeuchi Tetsuya
- Low Temperature Center, Osaka University, Toyonaka, Osaka 560–0043
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- Onuki Yoshichika
- Graduate School of Science, Osaka University, Toyonaka, Osaka 560–0043
書誌事項
- タイトル別名
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- Thermal Expansion and de Haas-van Alphen Effect of CeRh2Si2.
- Thermal Expansion and de Haas-van Alphe
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We have grown single crystals of CeRh2Si2 and LaRh2Si2, and measured the temperature dependence of the thermal expansion coefficient.The magnetic component of the thermal coefficient in CeRh2Si2 hasbeen analyzed on the basis of the crystalline electric field.We have also succeeded in observing the de Haas-van Alphen (dHvA) effect ofCeRh2Si2.The detected dHvA branches are small in cross-section and are observed in anarrow angle region centered at the symmetrical axis, reflecting themultiply-connected Fermi surface.
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 67 (8), 2915-2918, 1998
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390282679158041984
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- NII論文ID
- 210000101076
- 110001978644
- 130004536706
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1998JPSJ...67.2915A
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 4549390
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可