Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2 * 1 Surface

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  • Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2 x 1 Surface
  • Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2 ×1 Surface

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Abstract

Room-temperature adsorption of Si atoms on a hydrogen-terminated Si(001)-2×1 surface is studied using scanning tunneling microscopy/spectroscopy and first-principles total-energy calculations. We find that a Si atom adsorbs at the metastable bridge site of a Si dimer forming a SiH2 cluster at room temperature. Although Si adatom has a kinetic energy sufficient to overcome the activation energy at the moment of adsorption, the reaction path to the most stable off-centered inter-bridge site is narrow and the energy dissipation takes place before the transition. The ground-state adsorption is achieved by an annealing of the sample at 520 K.

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