Pressure-induced Change in Temperature Coefficient of Electrical Resistivity in CeCuAs2
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- Abliz Melike
- Institute for Solid State Physics, University of Tokyo
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- Nakano Tomohito
- Institute for Solid State Physics, University of Tokyo
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- Sampathkumaran Echur Varadadesikan
- Tata Institute of Fundamental Research
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- Jemetio Jean Paul Feudjio
- Institut für Anorganische Chemie, Technische Universität Dresden
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- Doert Thomas
- Institut für Anorganische Chemie, Technische Universität Dresden
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- Hedo Masato
- Institute for Solid State Physics, University of Tokyo
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- Uwatoko Yoshiya
- Institute for Solid State Physics, University of Tokyo
Bibliographic Information
- Other Title
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- Pressure-induced Change in Temperature Coefficient of Electrical Resistivity in CeCuAs<sub>2</sub>
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Abstract
The intermetallic compound, CeCuAs2, crystallizing in a HfCuSi2-type tetragonal structure, has recently been shown to exhibit a negative temperature (T) coefficient of electrical resistivity (ρ) in the entire T-range of investigation (45 mK to 300 K). Here, we report that an application of external pressure (up to 10 GPa) profoundly influences ρ(T) behavior, reversing the sign of dρ⁄dT at pressures above 8 GPa, presumably arising from increasing 4f hybridization or changes in pseudo-gap. Such a behavior is uncommon among Ce-based intermetallic compounds.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 74 (2), 508-510, 2005
THE PHYSICAL SOCIETY OF JAPAN
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Details 詳細情報について
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- CRID
- 1390001204188397440
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- NII Article ID
- 210000105840
- 110001979402
- 130004539115
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- NII Book ID
- AA00704814
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- BIBCODE
- 2005JPSJ...74..508A
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 7250987
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed