Electronic structure of Si(111) clean surface using the laser annealing

• Haruyama Y.

  LASTI Himeji Inst. of Technology

• Okuda T.

  ISSP Univ. of Tokyo

• Harasawa A.

  ISSP Univ. of Tokyo

• Kinoshita T.

  ISSP Univ. of Tokyo

• Tanaka S.

  Dept. of Sci. Nagoya Univ.

• Makino H.

  Silicon Technology

• Wada K.

  Silicon Technology

• Matsui S.

  LASTI Himeji Inst. of Technology

Bibliographic Information

Other Title

• 22aWA-1 レーザーアニールを利用したSi(111)清浄表面の電子状態

Journal

• Meeting Abstracts of the Physical Society of Japan

  Meeting Abstracts of the Physical Society of Japan 55.2.4 (0), 748-, 2000

  The Physical Society of Japan

Details

• CRID: 1390001206036828672
• NII Article ID: 110002150074
• DOI: 10.11316/jpsgaiyo.55.2.4.0_748_1
• ISSN: 21890803
• Text Lang: ja
• Data Source:
  • JaLC
  • CiNii Articles