SiC焼結体の電気物性に及ぼす添加物の効果

DOI Web Site Web Site 被引用文献6件

書誌事項

タイトル別名
  • Effect of Dopant on Electrical Properties of Sintered SiC
  • SiC ショウケツタイ ノ デンキ ブッセイ ニ オヨボス テンカブツ ノ コ

この論文をさがす

抄録

The effects of dopant on the electrical conductivity of sintered SiC were investigated. SiC specimens containing B4C, AlB2, and BN were fired in the temperature range of 1900°-2050°C. The frequency dependence AC conductivity and temperature dependence of DC conductivity were measured. The electrical conductivity of B4C or BN doped specimens sintered at below 1960°C was several orders of magnitude higher than that of specimens sintered at above 1970°C. On the other hand, the electrical conductivity of specimens doped AlB2 depended slightly on the sintering temperature. The electrical conductivity of the specimens fired below 1960°C was independent of the frequency and the measurement temperature. On the other hand, the electrical conductivity of specimens fired above 1970°C depended on the frequency and temperature. The electrical conductivity of specimens fired at 2050°C depended strongly on the frequency and the temperature regardless of the dopant. The electrical conductivity of BN doped SiC depended strongly on the frequency and measurement temperature. On the other hand, the electrical conductivity of AlB2 doped SiC depended slightly on the frequency and temperature. The experimental results were discussed using the energy band models and the equivalent circuits.

収録刊行物

被引用文献 (6)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ