Naフラックス法により合成したGaN単結品の成長条件と結品形態

• 青木 真登

  東北大学多元物質科学研究所

• 山根 久典

  東北大学多元物質科学研究所

• 島田 昌彦

  東北大学多元物質科学研究所

• 皿山 正二

  (株) リコー中央研究所

• DISALVO Francis J.

  Department of Chemistry and Chemical Biology, Cornell University

書誌事項

タイトル別名

• Growth Conditions and Morphology of GaN Single Crystals Fabricated by the Na Flux Method.

抄録

GaN single crystals were synthesized by using the Na-Ga melt at 700-850°C and 1-5 MPa of N₂ for 200h. The formation of GaN was not observed at 800°C under 1 MPa of N₂, and at 850°C and 1.5MPa of N₂. GaN single crystals were obtained lower temperatures and/or the higher N₂ pressures. The morphology of the crystals tended to change from prismatic to platelet by decreasing the growth temperature and/or increasing N₂ pressure. Colorless transparent prismatic single crystals with a size of about 1.0±0.5±0.5mm³ were obtained by adopting a three-step heating process in which the temperature was increased from 750°C at 0.5°C/h to 800°C under 3MPa of N₂.

収録刊行物

• Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)

  Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 109 (1274), 858-862, 2001

  公益社団法人 日本セラミックス協会

キーワード

• GaN
• Single crystal
• Growth condition
• Crystal morphology
• Na flux

詳細情報

• CRID: 1390282680226334592
• NII論文ID: 110002288928
• NII書誌ID: AN10040326
• DOI: 10.2109/jcersj.109.1274_858
• COI: 1:CAS:528:DC%2BD3MXotFyrtLs%3D
• ISSN: 18821022
• ISSN: 09145400
• ISSN: http://id.crossref.org/issn/09145400
• NDL書誌ID: 5930223
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5930223
• Web Site: http://www.jstage.jst.go.jp/article/jcersj1988/109/1274/109_1274_858/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可