Time-Dependent Changes in Resistivity of SnO<sub>2</sub> Thin Films in Air with Water Vapor or Reducing Gas

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  • 水蒸気及び還元性ガス雰囲気中における酸化スズ薄膜の抵抗率の経時変化
  • スイジョウキ オヨビ カンゲンセイ ガス フンイキチュウ ニ オケル サンカ

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Abstract

The long-term variations in the resistivity of SnO2 films in air containing water vapor or reducing gas (denoted as wet air or test gas, respectively) were investigated quantitatively. Analyses of electronic properties, weight increase, film structure and chemical bonding condition of thin films showed that the resistivity increase in wet air and the decrease in the test gas were caused by a decrease and an increase in amount of oxygen vacancy in the lattice, respectively, accompanied with a change of carrier concentration.

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