Oxidation Behavior of Porous SiC at High Temperatures

DOI Web Site Web Site 10 Citations 13 References

Bibliographic Information

Other Title
  • 多孔質SiCの高温酸化
  • タコウシツ SiC ノ コウオン サンカ

Search this article

Abstract

The oxidation behavior of porous high-purity SiC was studied at 1600 and 1700K for 15h in Ar-O2 (PO<sub>2</sub>: 0.02-97kPa) by measuring the oxidation rate. In oxidation at 1600K, only the weight gain of the SiC was observed after the oxidation, and the amount of cristobalite on the oxidized surface increased with increasing PO<sub>2</sub>. In oxidation at 1700K, the weight loss was observed at the oxygen partial pressure of 0.02kPa while the weight gains were observed at an oxygen partial pressures of 2 and 97kPa. The oxidation rate was determined by measuring the evolved gases throughout the oxidation reaction using a mass spectrometer. The oxidation kinetics obeyed the parabolic law under 0.02-97kPa at 1600K and under 2-97kPa at 1700K, indicating that. the passive oxidation occurred. The transition oxygen partial pressure below which the oxidation mechanism changes from passive to the active one, is presumed to be approximately 0.1kPa in the case of the oxidation at 1700K.

Journal

Citations (10)*help

See more

References(13)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top