窒化ケイ素セラミックスのCr蒸気メタライジング

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タイトル別名
  • The Metallization on a Si<sub>3</sub>N<sub>4</sub> Ceramics by Using Cr Vapor
  • チッカ ケイソ セラミックス ノ Cr ジョウキ メタライジング

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抄録

Formation of Cr-metallized layer on the surface of Si3N4 ceramic by the vapor-diffusion method was studied. The metallization was carried out in a quartz capsule at 1273K for up to 72ks. As a vapor source, pure Cr powder was used. The kinetics of layer growth was parabolic with the rate constant of 1.0×10-14m2·s-1 at 1273K. The metallized layer was composed of two lyers; Cr2N and CrN at the surface layer and Cr2Si at the inner layer as identified by the X-ray diffraction analysis. The hardness of the metallized layer increased gradually from Hv 668 at surface to Hv 1179 at inner part.

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