SiC 基板上に形成された高密度・高配向カーボンナノチューブ膜

• 楠 美智子

  (財)ファインセラミックスセンター

書誌事項

タイトル別名

• High-Density and Well-Aligned Carbon Nanotube Films on Silicon-Carbide Wafers
• Special Article: The 59th CerSJ Awards for Academic Achievements: High-Density and Well-Aligned Carbon Nanotube Films on Silicon-Carbide Wafers

抄録

Well-aligned carbon nanotube (CNT) films were found to self-organize by surface decomposition of SiC (0001) wafers. High-resolution transmission electron microscopy and atomic force microscopy revealed that hemispherical nanocaps are generated all over the surface in the initial stage from 1200 to 1250°C. The diameter of grown CNTs is determined initially with that of the initial nanocaps. Furthermore, corresponding electron diffraction patterns showed zigzag-type CNTs selectively grow by heat-treating at a small heating rate of 1°C/min. This is a unique method to synthesize CNTs with a unique structure. The CNTs are considered to be constructed by recrystallization with a slight diffusion of carbon atoms built around the skeleton of SiC. In this paper, the formation mechanism will be proposed from the view point of crystallography.<br>

収録刊行物

• Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)

  Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 113 (1322), 637-641, 2005

  公益社団法人 日本セラミックス協会

キーワード

• Surface decomposition
• Carbon nanotube
• SiC
• Alignment

詳細情報

• CRID: 1390001205277629056
• NII論文ID: 110002292398
• NII書誌ID: AN10040326
• DOI: 10.2109/jcersj.113.637
• ISSN: 18821022
• ISSN: 09145400
• NDL書誌ID: 7685300
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7685300
• Web Site: http://www.jstage.jst.go.jp/article/jcersj/113/1322/113_1322_637/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可