書誌事項
- タイトル別名
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- Doping Effects of Al<sub>2</sub>O<sub>3</sub> or Nb<sub>2</sub>O<sub>5</sub> on the Electrical Conductivity of TiO<sub>2</sub> Sintered Bodies
- TiO2 ショウケツタイ ノ デンキ デンドウ ニ オヨボス Al2O3 オヨ
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The electrical resistivity of sintered bodies of TiO2 doped with Al2O3 or Nb2O5 was measured in air in the range from 30° to 1000°C.<br>The resistivity of Nb-doped specimen sintered in air showed extrema (a minimum at ≈ 270°C and a maximum at ≈ 440°C) but not on Al-doped specimen. This suggests that the extent of chemisorption of oxygen is different with dopant.<br>The atmosphere for sintering had a remarkable effect on the resistivity of the specimen; more significant effect of solid solution of Nb2O5 on the resistivity was observed in the specimen sintered in Ar than in air.<br>When the resistivity of Nb-doped specimen sintered in Ar was measured in air during heating, two step extrema was observed. The first extrema in the low temperature was explained in terms of the desorption of the chemisor bed oxygen and the oxidation (Tii...→TiTi×or V0..→O0×), and the second extrema in the high temperature was by the precipitation of Nb2O5.
収録刊行物
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- 窯業協會誌
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窯業協會誌 84 (969), 237-241, 1976
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205215270272
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- NII論文ID
- 110002315604
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- NII書誌ID
- AN00245650
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- ISSN
- 18842127
- 00090255
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- NDL書誌ID
- 1713214
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可