方形波パルス無声放電を用いた非平衡プラズマ化学反応による高段差被覆性シリコン酸化膜の形成

• 石丸 和博

• 岡崎 健

書誌事項

タイトル別名

• Deposition of Silicon Oxide Films with High Quality of Step Coverage by Nonequilibrium Plasma Chemical Reactions Using Pulsed Silent Discharge.
• ホウケイハ パルス ムセイ ホウデン オ モチイタ ヒヘイコウ プラズマ カガク ハンノウ ニ ヨル コウダンサ ヒフクセイ シリコン サンカ マク ノ ケイセイ

抄録

Oxygen atoms play a very important role in atmospheric pressure chemical vapor deposition (CVD) processes for silicon oxide films using tetraethylorthosilicate (TEOS) and ozone. Efficient generation of active oxygen species including these oxygen atoms is realized by use of a square-pulsed silent discharge with very sharp rising and falling of applied voltage. In this study, nonequilibrium plasma chemical reactions by this discharge have been applied to a remote plasma CVD of silicon oxide films using TEOS and oxygen. And deposition characteristics of silicon oxide films by this method have been measured experimentally, and these have been compared with CVD characteristics using low frequency AC silent discharge. Futhermore, these have been compared with deposition characteristics of silicon oxide films using TEOS and ozone. As a result, it has been clarified that silicon oxide films with high quality of step coverage and high deposition rate of these films can be obtained by the remote plasma CVD using pulsed silent discharge.

収録刊行物

• 日本機械学会論文集Ｂ編

  日本機械学会論文集Ｂ編 65 (639), 3814-3820, 1999

  一般社団法人 日本機械学会

キーワード

• Tetraethylorthosilicate

詳細情報

• CRID: 1390282680871386368
• NII論文ID: 110002395706
• NII論文ID: 130004223692
• NII書誌ID: AN00187441
• DOI: 10.1299/kikaib.65.3814
• ISSN: 18848346
• ISSN: 03875016
• NDL書誌ID: 4921842
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4921842
• Web Site: http://www.jstage.jst.go.jp/article/kikaib1979/65/639/65_639_3814/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可