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- SUGAWARA Yasuhiro
- Department of Applied Physics, Graduate School of Engineering, Osaka University
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- OYABU Noriaki
- Department of Electronic Engineerings, Graduate School of Engineering, Osaka University
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- CUSTANCE Oscar
- Handai Frontier Research Center (FRC)
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- YI Insook
- Handai Frontier Research Center (FRC)
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- MORITA Seizo
- Department of Electronic Engineerings, Graduate School of Engineering, Osaka University
抄録
A noncontact atomic force microscope operated at low-temperature is used for vertical manipulation of selected single atoms from the Si(111)7×7 surface. The strong repulsive short-range chemical force interaction between the closest atoms of both tip apex and surface during a soft nanoindentation leads to the removal of a selected silicon atom from its equilibrium position at the surface without additional perturbation of the 7×7 unit cell. Deposition of single atom on a created vacancy at the surface is achieved. These manipulation processes are purely mechanical, since neither bias voltage nor voltage pulse is applied between probe and sample.
収録刊行物
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- Proceedings of JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment : IIP/ISPS joint MIPE
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Proceedings of JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics for Information and Precision Equipment : IIP/ISPS joint MIPE 2003 (0), _W-5_-_W-6_, 2003
一般社団法人 日本機械学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001205893264128
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- NII論文ID
- 110002509060
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- ISSN
- 24243132
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可