2812 X 線回折を用いたシリコンウエハの研削ダメージ評価法の検討

• 本田 将之

  茨城大院

• 周 立波

  茨城大

• 清水 淳

  茨城大

• 江田 弘

  茨城大

• 太田 裕之

  日立機械研

書誌事項

タイトル別名

• Evaluation Method for Grinding Damage in Si Wafer using X-Ray Diffraction

抄録

High integration of semiconductor devices requires not only a very good surface integrity in terms of surface, flatness and etc., but also damage free at subsurface of the machined silicon wafers. Little is understood regarding to the mechanism of residual stress, strain and dislocation generated at the grinding process with different conditions. In this report, the single crystal silicon {111} plane were analyzed by use of PSPC (Position Sensitive Proportional Counter) for X-ray diffraction, and the results were discussed to investigate the effects of grinding process on different orientation of Silicon.

収録刊行物

• 年次大会講演論文集

  年次大会講演論文集 2002.5 (0), 299-300, 2002

  一般社団法人 日本機械学会

キーワード

• PSPC
• Si {111}

詳細情報

• CRID: 1390001206057820672
• NII論文ID: 110002524483
• DOI: 10.1299/jsmemecjo.2002.5.0_299
• ISSN: 24331325
• Web Site: https://www.jstage.jst.go.jp/article/jsmemecjo/2002.5/0/2002.5_299/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可