書誌事項
- タイトル別名
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- Computational study for migration of As atom on Ga-terminated domains of GaAs(001) surface
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Migration of As adatom on Ga-terminated domains on GaAs(001) homoepitaxial growth surface is studied using the first-principle calculation. The calculated migration barrier energy for As adatom is smaller than that of Ga adatom and anisotropic as that of Ga. These results agree qualitatively with the recent kinematic Monte Carlo study.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 27 (1), 146-, 2000
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205862491392
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- NII論文ID
- 110002715363
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可