高圧昇華法によるGaN単結晶育成(窒化物半導体結晶)
書誌事項
- タイトル別名
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- Growth of bulk GaN single crystals by high-pressure sublimation method
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In this study, GaN crystals were grown under high pressure using sublimation method for the purpose of achieving the high growth rate. The growth rate at high pressure is expected to be increased due to rise of decomposition temperature of GaN. We confirmed that the growth rate at high pressure was faster than that at atmospheric pressure. At high pressure of 5kgf/cm^2, about 5μm-thick GaN layer was grown on sapphire.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 30 (3), 99-, 2003
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205896343040
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- NII論文ID
- 110002715932
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可