TMR Properties of La0.7Sr0.3MnO3 Tunnel Junctions

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  • Sugiyama M.
    Department of Crystalline Material Science, Nagoya University
  • Tanabe H.
    Department of Crystalline Material Science, Nagoya University
  • Asano H.
    Department of Crystalline Material Science, Nagoya University
  • Matsui M.
    Department of Crystalline Material Science, Nagoya University

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  • Ｌａ０．７Ｓｒ０．３ＭｎＯ３トンネル接合のＴＭＲ特性
  • La0 7Sr0 3MnO3 トンネル セツゴウ ノ TMR トクセイ

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Abstract

Magnetic tunnel junctions using half-metallic La0.7Sr0.3MnO3 (LSMO) were investigated. Two types of junctions, Co/SrTiO3(STO)/LSMO (CSL junction) and LSMO/STO/LSMO (LSL junction) were prepared, where the Co layer on the STO layer of the CSL junction was grown at room temperature and the LSMO layer on the STO layer of the LSL junction was grown at 500°C or 700°C. The observed TMR ratios for CSL and LSL junctions were 50% and -4%, respectively. The junction resistance of CSL increased exponentially with increasing STO thickness (tSTO), whereas that of LSL was almost independent of tSTO. It was found that the low TMR ratio of LSL was due to the inferior quality of the STO layer, caused during the growth of LSMO on the STO layer in an Ar atmosphere at high temperature. The inferiority of the STO layer-that is, introduction of defects into the STO layer- causes a decrease in the junction resistance and affects the decrease in the spin polarization of the upper LSMO layer, and subsequently results the small TMR ratio.

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