Low-Pressure MOCVD of Fe3O4 Epitaxial Thin Films, and Their Surface Reaction Process

• Gomi M.

  Department of Materials Science, Japan Advanced Institute of Science and Technology

• Toba T.

  Department of Materials Science, Japan Advanced Institute of Science and Technology

書誌事項

タイトル別名

• Low-Pressure MOCVD of Fe3O4 Epitaxial T

抄録

The crystalline quality and deposition mechanism of iron oxide films prepared by metalorganic chemical vapor deposition (MOCVD) at low pressure were investigated. The films were deposited at substrate temperatures of above 673 K. RHEED measurements showed that Fe₃O₄ thin films epitaxially grown on c-plane sapphires have excellent crystal quality and extremely flat surfaces. The deposition process for the films was well explained by the Langmuir-Hinshel-wood mechanism, in which an oxidization reaction occurs between molecules of an iron source and oxygen adsorbed onto the surface. These results suggested that atomic layer epitaxy of ferrite thin films may be achieved by alternately adsorbing the iron source and the oxygen.

収録刊行物

• 日本応用磁気学会誌

  日本応用磁気学会誌 22 (4_2), 469-472, 1998

  公益社団法人 日本磁気学会

キーワード

• Fe₃O₄ film
• MOCVD
• epitaxial growth
• surface reaction process
• adsorption
• Langmuir-Hinshel-wood mechanism
• atomic layer epitaxy

詳細情報

• CRID: 1390282680069515008
• NII論文ID: 110002811460
• NII書誌ID: AN0031390X
• DOI: 10.3379/jmsjmag.22.469
• ISSN: 18804004
• ISSN: 02850192
• NDL書誌ID: 4458070
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4458070
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10463878
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • NDL-Digital
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可