Bondability of 100kHz thermosonic wire bonding

• TOMIOKA Taizo

  Manufacturing engineering research center, TOSHIBA corporation

• IGUCHI Tomohiro

  Manufacturing engineering research center, TOSHIBA corporation

• MORI Ikuo

  Manufacturing engineering research center, TOSHIBA corporation

• OHTANI Kazumi

  Manufacturing engineering research center, TOSHIBA corporation

• SUEMATSU Mutsumi

  Manufacturing engineering research center, TOSHIBA corporation

• ATSUMI Koichiro

  Manufacturing engineering research center, TOSHIBA corporation

Bibliographic Information

Other Title

• 100kHz超音波ワイヤボンディングの接合性

Abstract

Increasing of I/0 counts of IC chip and chip shrinkage require fine pitch wire bonding technology for the interconnection of gold wire to aluminum pads on IC. On the other hand, sufficient wire bond strengths at low temperature are needed in IC package fabrication with resin substrates. We have investigated the relationship between bond deformation and strength, Au-Al intermetallic compound area in 63 kHz and 103 kHz. As the result, it was cleared that high frequency thermosonic bonding of 103 kHz is effective to obtain higher strength bonds with small deformation at low temperature.

Journal

• IEICE technical report. Component parts and materials

  IEICE technical report. Component parts and materials 98 (457), 7-14, 1998-12-11

  The Institute of Electronics, Information and Communication Engineers

Keywords

• wire bonding
• thermosonic bonding
• 100kHz ultrasonic vibration
• resin substrate

Details

• CRID: 1571698602306907776
• NII Article ID: 110003199233
• NII Book ID: AN10012932
• Text Lang: ja
• Data Source:
  • CiNii Articles