Three-Dimensional Microfabrication of Single-Crystal Silicon by Plasma Etching

• GOTO Tomoaki

  the Production Technology Laboratory, Fuji Electric Co., Ltd.

• MATSUSHITA Kouji

  the Production Technology Laboratory, Fuji Electric Co., Ltd.

• HIRONO Katsumi

  the Production Technology Laboratory, Fuji Electric Co., Ltd.

抄録

A conventional anode coupled plasma etching process has been developed to etch 300μm-deep cavities and 600μm-through holes with nearly vertical sidewalls into single crystal silicon. An optimized SF_6/O_2 gas mixture results in a nearly vertical etching profile. A silicon wafer was fabricated with a large number of cavities and through holes with less than 1 percent uniformity. It was also experimentally confirmed that this process can be used to etch vertical cavities and through holes in single-crystal silicon with any orientation. This process has the advantage of unlimited etching depth and etching patterns. Advantages in mechanical strength are obtained because a micro-curve is formed at the bottom edge of the cavities. This etching process developed on a conventional plasma etching system was utilized to fabricate a torsional vibrator that consists of single-crystal silicon and Pyrex glass.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 78 (2), 167-173, 1995-02-25

  一般社団法人電子情報通信学会

キーワード

• plasma etching process
• three-dimensional microfabrication
• cavity and through hole with a vertical sidewall
• silicon torsional vibrator

詳細情報

• CRID: 1573668927255575040
• NII論文ID: 110003210827
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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