Low-Power Technology for GaAs Front-End ICs

• NAKATSUKA Tadayoshi

  the Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• ITOH Junji

  the Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• TAKAHASHI Kazuaki

  AV&CC Development Center, Matsushita Electric Industrial Co., Ltd.

• SAKAI Hiroyuki

  the Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• TAKEMOTO Makoto

  AV&CC Development Center, Matsushita Electric Industrial Co., Ltd.

• YAMAMOTO Shinji

  the Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• FUZIMOTO Kazuhisa

  the Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

• SAGAWA Morikazu

  AV&CC Development Center, Matsushita Electric Industrial Co., Ltd.

• ISHIKAWA Osamu

  the Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.

抄録

Low-power technology for front-end GaAs ICs and hybrid IC (HIC) for a mobile communication equipment will be presented. For low-power operation of GaAs front-end ICs, new techniques of the intermediate tuned circuits, the single-ended mixer, dual-gate MESFETs, and the asymmetric self-aligned LDD process were investigated. The designed down-converter IC showed conversion gain of 21 dB, noise figure of 3.5 dB, 3rd-order intercept point in out-put level (IP_lt3outgt) of 4.0 dBm, image-rejection ratio of 20 dB at 880 MHz, operating at 3.0 V of supply voltage and 5.0 mA of dissipation current. The down-converter IC was also designed for 1.9 GHz to obtain conversion gain of 20 dB, noise figure of 4.0 dB, IP_lt3outgt of 4.0 dBm, image-rejection ratio of 20 dB at 3.0 V, 5.0 mA. The up-converter IC was designed for 1.9 GHz using the same topology of circuit and showed conversion gain of 15 dB, IP_lt3outgt of 7.5 dBm, and 1 dB compression level of -8 dBm with -20 dBm of LO input power, operating at 3.0 V, 8.0 mA. Another approach to the low-power operation was carried out by HIC using the GaAs down-converter IC chip. The HIC was designed for 880 MHz to show conversion gain of 27 dB, noise figure of 3.3 dB, IP_lt3outgt of 3.0 dBm, image-rejection ratio of 12 dB, at 2.7 V, 4.5 mA. The HIC measures only 8.0 mm×6.0 mm×1.2 mm.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 78 (4), 430-435, 1995-04-20

  一般社団法人電子情報通信学会

キーワード

• mobile communication
• front-end
• down-converter
• up-converter
• GaAs IC
• hybrid IC
• low-power consumption

詳細情報

• CRID: 1570009752558335616
• NII論文ID: 110003210867
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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