A 40-Gbit/s Decision IC Fabricated with 0.12-μm GaAs MESFETs

• MURATA Koichi

  NTT Optical Network Systems Laboratories

• OTSUJI Taiichi

  NTT Optical Network Systems Laboratories

• YONEYAMA Mikio

  NTT Optical Network Systems Laboratories

• TOKUMITSU Masami

  NTT Electronics Technology Corporation

抄録

The authors report on a 40-Gbit/s super-dynamic decision IC fabricated with 0.12-μm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 80 (12), 1624-1627, 1997-12-01

  一般社団法人電子情報通信学会

キーワード

• decision lC GaAs MESFET super-dynamic D-FF wideband amp1Ukr

詳細情報

• CRID: 1572543027348954624
• NII論文ID: 110003211184
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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