Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations

• MATSUNAMI Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• YANO Hiroshi

  Department of Electronic Science and Engineering, Kyoto University

抄録

Hetero-interface properties of SiO_2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 86 (10), 1943-1948, 2003-10-01

  一般社団法人電子情報通信学会

キーワード

• silicon carbide
• Si0_2
• 4H-SiC interface
• C-V characteristics
• conductance method
• channel mobility

詳細情報

• CRID: 1570572702512030592
• NII論文ID: 110003214489
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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