A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals

• SHINJO Shintaro

  Information Technology R&D Center, Mitsubishi Electric Corporation

• MORI Kazutomi

  Information Technology R&D Center, Mitsubishi Electric Corporation

• UEDA Hiro-omi

  Information Technology R&D Center, Mitsubishi Electric Corporation

• OHTA Akira

  High Frequency & Optical Semiconductor Business Division, Mitsubishi Electric Corporation

• SEKI Hiroaki

  High Frequency & Optical Semiconductor Business Division, Mitsubishi Electric Corporation

• SUEMATSU Noriharu

  Information Technology R&D Center, Mitsubishi Electric Corporation

• TAKAGI Tadashi

  Information Technology R&D Center, Mitsubishi Electric Corporation

抄録

A constant voltage/constant current (CV/CC) parallel operation heterojunction bipolar transistor (HBT) power amplifier (PA) configuration is presented, and its design method is described. A resistor base feed (CC mode) HBT is connected to an inductor base feed (CV mode) HBT in parallel, and compensates the gain expansion of the CV mode HBT due to near class-B operation. By adding CC mode HBT, the total quiescent current can be decreased from 32mA to 23mA with adjacent channel leakage power ratio (ACPR) < -40.0dBc. At the maximum output power region, the fabricated PA achieves output power (P_<out>) of 26.8dBm and power added efficiency (PAE) of 42.0% with ACPR of -40.0dBc, and shows the comparable performances with a conventional PA using CV mode HBT.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 86 (8), 1444-1450, 2003-08-01

  一般社団法人電子情報通信学会

キーワード

• microwave
• power amplifier
• heterojunction bipolar transistor HBT
• indrctor base feed
• resistor base feed

詳細情報

• CRID: 1573387452278637184
• NII論文ID: 110003214684
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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