Back-Irradiation Type Photo-Detector Arrays Using Field Emitter Device

• ONO Takashi

  The authors are with the Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyohashi University of Technology

• SAWADA Kazuaki

  The authors are with the Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyohashi University of Technology

• JUNG Young Chul

  The author is with the School of Computer and Electronics Engineering, Kyongju University

• MORIYASU Yoshitaka

  The author is with Central Technology Laboratory, Asahikasei Corporation

• TAKAO Hidekuni

  The authors are with the Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyohashi University of Technology

• ISHIDA Makoto

  The authors are with the Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyohashi University of Technology

Abstract

A new type of photodetector called "photosensitive floating field emitter, (PFFE)" has been proposed. The PFFE device combines an n-type cone-shaped triode field emitter with a-Si p-i-n photodiode film. However, a PFFE cannot detect two-dimensional distributions of light intensity. In this paper, we propose a novel structure to overcome the above this problem of the PFFE. The device was fabricated on a silicon-on-sapphire substrate to permit irradiation from the backside, p-n photodiodes were constructed within a field emitters, the n+ region being separated by p+ regions to permit detection of two- dimensional light distributions. The emission current of the PFFE/SOS was found to be proportional to the illumination intensity, but the quantum efficiency was only about 2%. This quantum efficiency is lower than that expected. Under irradiation, the emission current increased, but the gate-leakage current increased. This gate-leakage current was several orders of magnitude larger than the emission current. Almost photo-generated electrons lost in the gate electrode.

Journal

• IEICE TRANS. ELECTRON.

  IEICE TRANS. ELECTRON. 86 (9), 1805-1809, 2003-09-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• field emitters
• photocathode
• photodiode
• silicon-on-sapphire

Details

• CRID: 1574231877208204416
• NII Article ID: 110003214736
• NII Book ID: AA10826283
• ISSN: 09168524
• Text Lang: en
• Data Source:
  • CiNii Articles