Electron Transport Mechanism through Porphrin Polyimide Langmuir-Blodget Films

• IWAMOTO M.

  Faculty of Engineering, Tokyo Institute of Technology

• Kubota Tohru

  Faculty of Engineering, Tokyo Institute of Technology

抄録

We fabricated junctions with a porphyrin polyimide (PORPI)monolayer, and then investigated the electron transport properties of the junctions from the current-voltage (I-V) and d^2V/dI^2-V measurements. Polyimide LB films without porphyrin were used as tunneling barriers. One large peak was seen at a voltage around 1.9V, due to the excitation of electron transitions in PORPI molecules, whereas a step structure was not observed in the I-V characteristic.

収録刊行物

• IEICE Trans. Electron.

  IEICE Trans. Electron. 77 662-, 1994

  一般社団法人電子情報通信学会

キーワード

• Langmuir-Blodgett film
• electron transport
• electron transition
• tunnel junction
• d^2V
• dI^2-V characteristic

詳細情報

• CRID: 1571980077248142592
• NII論文ID: 110003220388
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
  • CiNii Articles