A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells

• HARAGUCHI Keiichi

  Central Research Laboratory, Hitachi Ltd.

• KUME Hitoshi

  Central Research Laboratory, Hitachi Ltd.

• USHIYAMA Masahiro

  Central Research Laboratory, Hitachi Ltd.

• OHKURA Makoto

  Central Research Laboratory, Hitachi Ltd.

抄録

A new simple method for extracting the capacitance coupling coefficients of sub-0.5-μm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 82 (4), 602-606, 1999-04-25

  一般社団法人電子情報通信学会

キーワード

• extracting
• capacitance couping coefficients
• sub-0.5μm flash memory cells
• a band-to band tunneling current

詳細情報

• CRID: 1573668927107842560
• NII論文ID: 110003220699
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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