Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer

• SAITO Kunio

  NTT Telecommunications Energy Laboratories, NTT Corporation

• KOSUGI Toshihiko

  NTT Photonics Laboratories, NTT Corporation

• YAMAGUCHI Chikara

  NTT Lifestyle&Environmental Laboratories, NTT Corporation

• KUDO Kazuhisa

  NTT Advanced Technology Corporation, NTT Corporation

• YANO Masaki

  NTT Advanced Technology Corporation, NTT Corporation

• YAGI Shoji

  NTT Telecommunications Energy Laboratories, NTT Corporation

• ISHII Hiromu

  NTT Telecommunications Energy Laboratories, NTT Corporation

• MACHIDA Katsuyuki

  NTT Telecommunications Energy Laboratories, NTT Corporation

• KYURAGI Hakaru

  NTT Telecommunications Energy Laboratories, NTT Corporation

抄録

Thick on-chip interconnections with the order of 10 μm in size have been formed using a positive-type photosensitive polymer and Cu-damascene technique. Low-k interlayer- dielectric (ILD) patterns were obtained by annealing the photosensitive polymer patterns which was formed by UV exposure and developing. High-quality spiral inductors with a maximum Q of 38 and coplanar waveguides with small transmission losses were obtained with reducing high-frequency power loss in the silicon substrate by forming a 20-30-μm-thick low-k ILD layer between the silicon substrate and the interconnection. A low phase-noise performance was obtained with a voltage-controlled oscillator LSI equipped with the spiral inductor.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 85 (3), 864-, 2002-03-01

  一般社団法人電子情報通信学会

キーワード

• thick interconnection
• on-chip
• photosensitive polymer
• damascene
• Cu

詳細情報

• CRID: 1573105977155426432
• NII論文ID: 110003220965
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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